Seminar Oxide semiconductors in radiation harsh environment

Contatto di riferimento: Laura Basiricò

Partecipanti: Tobias Cramer,, Allegra Sacchetti,, Maria Teresa Lobato,, Pedro Barquinha,, Elvira Fortunato,, Rodrigo Martins,, Beatrice Fraboni

Large area electronics for applications in environments with radioactive contamination or medical X-ray detectors require materials and devices resistant to continuous ionizing radiation exposure.

Here we demonstrate the superior X-ray radiation hardness of oxide thin film transistors (TFTs) based on Gallium Indium Zinc Oxide (GIZO), when compared to organic ones. In the experiments both TFTs are subjected to X-ray radiation and their performances are monitored as a function of total ionizing dose.

Flexible oxide TFTs maintain a constant mobility of 10 cm2V-1s-1 even after exposure to doses of 410 kradSiO2 whereas organic TFTs lose 55% of their transport performance. The exceptional resistance of oxide semiconductors ionization damage is attributed to their intrinsic properties such as independence of transport on long-range order and large heat of formation.